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| Ordering number : ENA1654 ATP302 SANYO Semiconductors DATA SHEET ATP302 Features * * P-Channel Silicon MOSFET General-Purpose Switching Device Applications Avalanche resistance guarantee. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --70 --280 70 150 --55 to +150 197 --42 Unit V V A A W C C mJ A Note : *1 VDD=--36V, L=100H, IAV=--42A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions -1mA, VGS=0V ID=-60V, VGS=0V VDS=VGS=16V, VDS=0V -10V, ID=-1mA VDS=-10V, ID=--35A VDS=--1.2 75 Ratings min --60 --10 10 --2.6 typ max Unit V A A V S Marking : ATP302 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 21710QA TK IM TC-00002247 No. A1654-1/4 ATP302 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions -35A, VGS=-10V ID=-35A, VGS=-4.5V ID=VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--36V, VGS=--10V, ID=--70A VDS=--36V, VGS=--10V, ID=--70A VDS=--36V, VGS=--10V, ID=--70A IS=--70A, VGS=0V Ratings min typ 10 13 5400 500 370 35 430 420 500 115 20 25 --1.0 --1.5 max 13 18 Unit m m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit VIN VDD= --36V 0.1 Avalanche Resistance Test Circuit 0V --10V 6.05 L VIN ID= --35A RL=1.03 D VOUT ATP302 G 0V --10V ATP302 50 S 50 VDD 50 RG PW=10s D.C.1% P.G No. A1654-2/4 ATP302 --140 --120 ID -- VDS Tc=25C --140 ID -- VGS Tc= -Tc= 7 C 0 --0.5 --1.0 --1.5 --2.0 --2.5 --1 Drain Current, ID -- A --100 --80 --60 --40 --20 0 Drain Current, ID -- A --100 --80 --60 --40 --20 0 --2 5 25 VGS= --3.0V 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT15338 --3.0 C 5C --3.5 --4.0 --4.5 25 C --5.0 IT15339 125 150 IT15341 --1.2 --1.4 IT15343 0V V 0. --8.0 .0V --6 --4. 5V --120 Drain-to-Source Voltage, VDS -- V 40 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 30 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 35 30 25 20 15 10 5 0 --2 Single pulse ID= --50A 25 20 15 Tc=75C 25C --25C 10 35A = -V, I D 4.5 5A = -= --3 V GS V, I D 0 = --1 VGS 5 --3 --4 --5 --6 --7 --8 --9 --10 0 --50 --25 0 25 50 75 100 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT15340 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 Case Temperature, Tc -- C IS -- VSD Forward Transfer Admittance, | yfs | -- S VDS= --10V 100 7 5 3 2 10 7 5 3 2 1.0 7 --0.1 VGS=0V Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT15342 0 --0.2 --0.4 Tc= 7 --0.6 --25 C 5C 25C = Tc --2 C 5 C 75 Source Current, IS -- A C 25 --0.8 --1.0 Drain Current, ID -- A 2 SW Time -- ID Switching Time, SW Time -- ns 1000 7 5 3 2 VDD= --36V VGS= --10V td(off) 10000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V 25C Coss Single pulse f=1MHz Ciss, Coss, Crss -- pF 3 2 tf 1000 100 7 5 3 2 --0.1 2 3 5 7 --1.0 tr 7 5 3 Crss td(on) 2 3 5 7 --10 2 3 5 7 --100 IT15344 2 0 --5 --10 --15 --20 --25 75C --30 IT15345 VDS= --10V Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1654-3/4 ATP302 --10 --9 VGS -- Qg VDS= --36V ID= --70A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --280A ID= --70A PW10s --8 --7 --6 --5 --4 --3 --2 --1 0 0 20 40 60 80 100 120 IT15346 10 1m s 10 ms 10 0m s DC 10 0 s s Operation in this area is limited by RDS(on). op era tio n --0.1 --0.1 Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 80 PD -- Tc Drain-to-Source Voltage, VDS -- V 120 EAS -- Ta 5 7 --100 IT15347 Allowable Power Dissipation, PD -- W 70 60 50 40 30 20 10 0 Avalanche Energy derating factor -- % 100 80 60 40 20 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT10478 Case Temperature, Tc -- C IT15348 Ambient Temperature, Ta -- C Note on usage : Since the ATP302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1654-4/4 |
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